Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
Artikel i vetenskaplig tidskrift, 2011
Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
silicon
molecular-beam epitaxy
passivation
gaas
gaas(001)
interface
Författare
P. Laukkanen
Turun yliopisto
Tampere University of Technology
M. P. J. Punkkinen
Turun yliopisto
Ioffe Institute
The Royal Institute of Technology (KTH)
J. Lang
Turun yliopisto
M. Tuominen
Turun yliopisto
M. Kuzmin
Turun yliopisto
Lunds Universitet
V. Tuominen
Turun yliopisto
J. Dahl
Turun yliopisto
Johan Adell
Institute of Physics of the Polish Academy of Sciences
J. Sadowski
Institute of Physics of the Polish Academy of Sciences
Chalmers University of Technology
Janusz Kanski
Chalmers, Teknisk fysik, Fasta tillståndets fysik
V. Polojarvi
Tampere University of Technology
J. Pakarinen
VTT Technical Research Centre of Finland
K. Kokko
Turun yliopisto
M. Guina
Tampere University of Technology
M. Pessa
Tampere University of Technology
I. J. Vayrynen
Turun yliopisto
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 98 23 231908Ämneskategorier (SSIF 2011)
Annan teknik
DOI
10.1063/1.3596702