Electron spectroscopic studies of nanowires formed by (GaMn)As growth on GaAs(111)B
Artikel i vetenskaplig tidskrift, 2011
Valence band photoemission with photon energies around the Mn2p excitation threshold has been used to study the development of nanowires catalyzed by MnAs particles. A gradual change in the spectra with increasing nanowire length is observed, such that the resonant photoemission eventually dominates over the Auger decay channel. The change is ascribed to dilution of Mn, showing that Mn is transferred from the MnAs particles into the nanowires. (C) 2011 Elsevier Ltd. All rights reserved.
molecular-beam epitaxy
Diluted magnetic semiconductors
liquid-solid mechanism
Nanowire development
gaas nanowires
Photoemission
MBE
Författare
Johan Adell
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Intikhab Ulfat
Chalmers, Teknisk fysik, Fasta tillståndets fysik
J. Sadowski
Institute of Physics of the Polish Academy of Sciences
Lunds Universitet
Lars Ilver
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Janusz Kanski
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Solid State Communications
0038-1098 (ISSN)
Vol. 151 11 850-854Ämneskategorier (SSIF 2011)
Fysik
DOI
10.1016/j.ssc.2011.02.033