Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs

Artikel i vetenskaplig tidskrift, 2011

The growth, fabrication, and performance of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a total barrier thickness of 7 nm are reported. An optimized surface passivation and an Ohmic recess etch yield HEMTs exhibiting 0.72 S/mm peak extrinsic DC transconductance at a current density of 0.47 A/mm. Devices with a gate length of 90 nm achieve 78 GHz unity-current-gain frequency and up to 166 GHz maximum frequency of oscillation. The minimum noise figure at 10 GHz is 0.52 dB with an associated gain of 9.5 dB.