On the Large Signal Evaluation and Modeling of GaN FET
Artikel i vetenskaplig tidskrift, 2010
The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.
resistance
mesfet model
frequency-dependence
small signal and large signal models
FET
equivalent-circuit
hfets
GaN
Författare
Iltcho Angelov
GigaHertz Centrum
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Mattias Thorsell
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
GigaHertz Centrum
Kristoffer Andersson
GigaHertz Centrum
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
A. Inoue
Y. Koji
H. Noto
IEICE Transactions on Electronics
0916-8524 (ISSN)
Vol. E93C 8 1225-1233Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
DOI
10.1587/transele.E93.C.1225