Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
Artikel i vetenskaplig tidskrift, 2010
We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the atomic structures of the III-V(1 00)c(8 x 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III-V(1 00)c(8 x 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated zeta and zeta a SCLS values shows that the InSb spectra are reproduced by the zeta SCLSs better than by the zeta a SCLSs. Interestingly, the zeta a fits agree better with the InAs spectra than the zeta fits do, indicating that the zeta a model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III-V(1 0 0)c(8 x 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges. (C) 2010 Elsevier B.V. All rights reserved.
Ab initio calculations
INITIO MOLECULAR-DYNAMICS
Surface core-level shift (SCLS)
spectroscopy
BASIS-SET
Synchrotron radiation photoelectron
CHARGE-TRANSFER
TOTAL-ENERGY CALCULATIONS
Indium antimonide (InSb)
METHOD
RECONSTRUCTION
Surface reconstruction
arsenide (InAs)
COMPOUND SEMICONDUCTORS
GAAS(001) SURFACE
AUGMENTED-WAVE
PHOTOEMISSION
Indium
ADSORPTION
Författare
P. Laukkanen
Tampere University of Technology
Turun yliopisto
M. P. J. Punkkinen
The Royal Institute of Technology (KTH)
Turun yliopisto
M. Ahola-Tuomi
Turun yliopisto
J. Lang
Turun yliopisto
K. Schulte
Lunds Universitet
A. Pietzsch
Lunds Universitet
M. Kuzmin
Ioffe Institute
Turun yliopisto
J. Sadowski
Lunds Universitet
Institute of Physics of the Polish Academy of Sciences
Johan Adell
Chalmers, Teknisk fysik, Fasta tillståndets fysik
R. E. Perala
Turun yliopisto
M. Ropo
Abo Akademi University
K. Kokko
Turun yliopisto
L. Vitos
The Royal Institute of Technology (KTH)
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences
Uppsala Universitet
B. Johansson
Dalian University of Technology
Uppsala Universitet
The Royal Institute of Technology (KTH)
M. Pessa
Tampere University of Technology
I. J. Vayrynen
Turun yliopisto
Journal of Electron Spectroscopy and Related Phenomena
0368-2048 (ISSN)
Vol. 177 1 52-57Ämneskategorier (SSIF 2011)
Annan teknik
DOI
10.1016/j.elspec.2010.02.002