Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
Artikel i vetenskaplig tidskrift, 2009
We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd2O3) from a silicon oxide (SiO2) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs). (C) 2009 Elsevier B.V. All rights reserved.
High-k dielectric
gate dielectrics
Gate first integration
Silicate formation
Rare earth silicate
si(001)
model
gd2o3
Författare
H. D. B. Gottlob
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M. Schmidt
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M Schmidt
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M.C. Lemme
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M.C. Lemme
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
I. Z. Mitrovic
University of Liverpool
W.M. Davey
University of Liverpool
S. Hall
University of Liverpool
W.M. Davey
University of Liverpool
K. Cherkaoui
University of Liverpool
K. Cherkaoui
Tyndall National Institute at National University of Ireland, Cork
Bahman Raeissi
Tyndall National Institute at National University of Ireland, Cork
Johan Piscator
Chalmers, Teknisk fysik, Fysikalisk elektronik
Olof Engström
Chalmers, Teknisk fysik, Fysikalisk elektronik
Johan Piscator
Glebe Scientific Ltd.
Microelectronic Engineering
0167-9317 (ISSN)
Vol. 86 7-9 1642-1645Ämneskategorier (SSIF 2011)
Annan elektroteknik och elektronik
DOI
10.1016/j.mee.2009.03.084