Stationary and dispersive features in resonant inelastic soft X-ray scattering at the Ge 3p resonances
Artikel i vetenskaplig tidskrift, 2009
Resonant inelastic soft X-ray scattering at the 3p resonances in crystalline Ge is presented. Both stationary and dispersive features are observed in a wide energy range above as well as below the ionization limits. These observations are in agreement with theoretical predictions based on a two-step model where the initially excited electron has no influence on the emission step. Excess population of states in the conduction band is found, and discussed in terms of attosecond electron dynamics. (c) 2009 Elsevier B.V. All rights reserved.
Spectroscopy
Ultrafast dynamics
raman-scattering
solids
Synchrotron radiation
Soft X-ray scattering (RIXS)
spectra
Semiconductors
edge
dynamics
Författare
C. J. Glover
Australian National University
T. Schmitt
Paul Scherrer Institut
M. Mattesini
Universidad Complutense de Madrid
Martin Adell
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Lars Ilver
Chalmers, Teknisk fysik, Fasta tillståndets fysik
Janusz Kanski
Chalmers, Teknisk fysik, Fasta tillståndets fysik
L. Kjeldgaard
Lunds Universitet
M. Agaker
Uppsala Universitet
N. Martensson
Lunds Universitet
Uppsala Universitet
R. Ahuja
Uppsala Universitet
J. Nordgren
Uppsala Universitet
J. E. Rubensson
Uppsala Universitet
Journal of Electron Spectroscopy and Related Phenomena
0368-2048 (ISSN)
Vol. 173 2-3 103-107Ämneskategorier (SSIF 2011)
Annan teknik
DOI
10.1016/j.elspec.2009.05.017