Excess low frequency noise in single-wall carbon nanotube
Journal article, 2006
Low frequency noise measurements have been performed on a single-wall carbon nanotube connected by Ti/Au electrodes. It has been found that the 1/f noise decreases when the measurements are undertaken under vacuum and when the nanotube is partially degassed, showing a correlation between the fluctuation inducing the 1/f noise and the presence of gases. We show that the 1/f noise sources are located at the metal/nanotube contacts. When the device is annealed under vacuum at 450K, some Lorentzian shapes are observable and can be related to nanotube defects or to strongly bound molecules. © World Scientific Publishing Company.
1/f noise
resistance
field-effect transistors
transport
contact
Author
S. Soliveres
Universite de Montpellier
McMaster University
A. Hoffmann
Universite de Montpellier
F. Pascal
Universite de Montpellier
C. Delseny
Universite de Montpellier
Mohammad Kabir
Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics
Omer Nur
University of Gothenburg
A. Salesse
Universite de Montpellier
Magnus Willander
University of Gothenburg
J. Deen
McMaster University
Fluctuation and Noise Letters
0219-4775 (ISSN)
Vol. 6 1 L45-L55Subject Categories (SSIF 2011)
Mathematics
Other Engineering and Technologies
DOI
10.1142/S0219477506003136