Ferroelectric thin films: Review of materials, properties, and applications
Journal article, 2006
An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems' applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure (domains, in particular), and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems' applications, and permittivity and loss in ferroelectric films-important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures. (c) 2006 American Institute of Physics.
Author
Nava Setter
Ecole Polytechnique Federale de Lausanne
D. Damjanovic
Ecole Polytechnique Federale de Lausanne
L. Eng
Technische Universitat Dresden
G. Fox
Ramtron International Corporation
Spartak Gevorgian
Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology
S. Hong
Samsung Group
A. Kingon
North Carolina State University
H. Kohlstedt
Forschungszentrum Jülich (FZJ)
UC Berkeley
N. Y. Park
Samsung Group
G. B. Stephenson
Argonne National Laboratory
I. Stolitchnov
Ecole Polytechnique Federale de Lausanne
A. K. Taganstev
Ecole Polytechnique Federale de Lausanne
D. V. Taylor
Nanosys, Inc.
Ecole Polytechnique Federale de Lausanne
T. Yamada
Ecole Polytechnique Federale de Lausanne
S. Streiffer
Argonne National Laboratory
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 100 5 051606-1-46-Subject Categories (SSIF 2011)
Condensed Matter Physics
DOI
10.1063/1.2336999