Nanoscale distribution of Bi atoms in InP1−xBix
Journal article, 2017
The nanoscale distribution of Bi in InPBi is determined by atom probe tomography and transmission electron microscopy. The distribution of Bi atoms is not uniform both along the growth direction and within the film plane. A statistically high Bi-content region is observed at the bottom of the InPBi layer close to the InPBi/InP interface. Bi-rich V-shaped walls on the (-111) and (1-11) planes close to the InPBi/InP interface and quasi-periodic Bi-rich nanowalls in the (1-10) plane with a periodicity of about 100 nm are observed. A growth model is proposed to explain the formation of these unique Bi-related nanoscale features. These features can significantly affect the deep levels of the InPBi epilayer. The regions in the InPBi layer with or without these Bi-related nanostructures exhibit different optical properties.
Author
L Zhang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
M Wu
Paul Drude Institut fur Festkorperelektronik
Friedrich-Alexander-Universität Erlangen-Nürnberg
X Chen
Shanghai Institute of Technical Physics Chinese Academy of Sciences
X Wu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
E Spiecker
Friedrich-Alexander-Universität Erlangen-Nürnberg
Y Song
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
W Pan
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y Li
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
L Yue
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
J Shao
Shanghai Institute of Technical Physics Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Scientific Reports
2045-2322 (ISSN)
Vol. 7 1 12278- 12278Subject Categories (SSIF 2011)
Nano Technology
DOI
10.1038/s41598-017-12075-2
PubMed
28947809