1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

X. Y. Wu; W. W. Pan; Z. P. Zhang; Y. Li; C. F. Cao; J. J. Liu; L. Y. Zhang; Y. X. Song; H. Y. Ou; Shu Min Wang

doi:10.1021/acsphotonics.7b00240

1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy
Journal article, 2017

As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.

Recombination

Band-Gap

molecular beam epitaxy

Gaas1-Xbix

Wavelength

Temperature-Dependence

laser diodes

Diodes

quantum well

Semiconductor-Lasers

Gainnas

uncooled laser

GaAsBi