Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
Journal article, 2017
The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5–2% has been observed, corresponding to spin polarization of 5–10% in the measured temperature range of 300–75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.
spin-polarized tunneling
density functional theory
2D semiconductor
tunnel magnetoresistance
multilayer MoS2
Author
André Dankert
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Parham Pashaei
Chalmers, Microtechnology and Nanoscience (MC2)
Venkata Kamalakar Mutta
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
A.P.S. Gaur
Iowa State University
University of Puerto Rico
S. Sahoo
University of Puerto Rico
Institute of Physics Bhubaneswar
I. Rungger
National Physical Laboratory
A. Narayan
ETH Zurich
Trinity College Dublin
K. Dolui
Trinity College Dublin
University of Delaware
M.A. Hoque
Chalmers University of Technology
R.S. Patel
Birla Institute of Technology and Science Pilani
M.P. De Jong
MESA Institute for Nanotechnology
R.S. Katiyar
University of Puerto Rico
S. Sanvito
Trinity College Dublin
Saroj Prasad Dash
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
ACS Nano
1936-0851 (ISSN) 1936-086X (eISSN)
Vol. 11 6 6389-6395Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)
European Commission (FP7) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.
Areas of Advance
Nanoscience and Nanotechnology
Materials Science
Roots
Basic sciences
Subject Categories (SSIF 2011)
Nano Technology
Infrastructure
Chalmers Materials Analysis Laboratory
Nanofabrication Laboratory
DOI
10.1021/acsnano.7b02819