Bi2Te3 photoconductive detectors on Si
Journal article, 2017
The peculiar properties of the gapless surface states with a Dirac cone shaped energy dispersion in topological insulators (TIs) enable promising applications in photodetection with an ultra-broad band and polarization sensitivity. Since many TIs can be easily grown on silicon (Si) substrates, TIs on Si could make an alternative route for photon detection of Si photonics. We present good device performances of a Si-based single-crystal bismuth telluride (Bi2Te3) photoconductive detector. Room temperature photo responses to 1064 nm and 1550 nm light illumination were demonstrated. Linear dependences of the photocurrent on both the incident light power and the bias voltage were observed. The main device parameters including responsivity and quantum efficiency were extracted. Published by AIP Publishing.
Topological Insulator Film
SB2TE3
Silicon
Temperature
BI2SE3
Thin-Films
High
Ultrafast Graphene Photodetector
Responsivity
Author
J. J. Liu
Chinese Academy of Sciences
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y. Li
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y. X. Song
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y. J. Ma
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Q. M. Chen
Chinese Academy of Sciences
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Z. Y. S. Zhu
Chinese Academy of Sciences
ShanghaiTech University
P. F. Lu
BUTP
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 110 14 141109Subject Categories (SSIF 2011)
Nano Technology
DOI
10.1063/1.4979839