Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy
Journal article, 2017
The effects of Bi flux and In/Ga ratio on Bi incorporation and electrical properties of InGaAsBi grown by gas source molecular beam epitaxy were systematically studied. It is found that use of a low In/Ga ratio has an enhancement effect on the incorporation of Bi and its content increases linearly with Bi flux until reach a saturation. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but does not degrade the electron mobility for the Bi content up to 6.2%. Up to 7.5% of Bi incorporation has been confirmed by Rutherford backscattering spectroscopy (RBS) and a maximum electron mobility of 5600 cm(2)& V-1.s(-1) at room temperature was achieved in InGaAsBi with x(Bi) = 6.2%, which is the highest value reported in InGaAsBi with x(Bi) > 5%. (C) 2017 The Japan Society of Applied Physics
bi
alloy
low-temperature
Physics
Author
S. X. Zhou
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Xinjiang Technical Institute of Physics and Chemistry
M. Qi
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
L. K. Ai
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
A. H. Xu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Q. Guo
Xinjiang Technical Institute of Physics and Chemistry
Japanese Journal of Applied Physics
0021-4922 (ISSN)
Vol. 56 3Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories (SSIF 2011)
Nano Technology
DOI
10.7567/jjap.56.035505