Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy
Journal article, 2017
InxGa1-xAs/GaAs1-yBiy/InxGa1-xAs (0.20 ≤x ≤0.22, 0.035 ≤y ≤0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k • p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm
molecular beam epitaxy
photoluminescence
kp method
type-II quantum well
GaAsBi
Author
Wenwu Pan
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
Liyao Zhang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Liang Zhu
Chinese Academy of Sciences
yuxin song
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Yaoyao Li
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chang Wang
ShanghaiTech University
Peng Wang
Chinese Academy of Sciences
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Xiaoyan Wu
Chinese Academy of Sciences
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Fan Zhang
ShanghaiTech University
Jun Shao
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Semiconductor Science and Technology
0268-1242 (ISSN) 1361-6641 (eISSN)
Vol. 32 1Subject Categories (SSIF 2011)
Physical Sciences
DOI
10.1088/1361-6641/32/1/015007