Photoluminescence from tensile-strained Ge quantum dots
Paper in proceeding, 2016
It has been theoretically predicted that 1.9% biaxial tensile strain can convert Ge [1], which is compatible with Si CMOS technology, into a direct band-gap semiconductor, making it a candidate material for light sources on Si [2, 3]. Combining the advantage of tensile strain with quantum dot (QD), we proposed that tensile-strained QD is a new route toward light emission from Ge [4]. In this work, we chose In0.52Al0.48As, which is lattice matched to InP, as barrier layer and grew the structure by molecular beam epitaxy (MBE). Photoluminescence (PL) was successfully achieved at room temperature.
Author
Q Chen
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
X Chen
Shanghai Institute of Technical Physics Chinese Academy of Sciences
Z. Zhang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y Song
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
P. Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
J. J. Liu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
P. F. Lu
Beijing University of Posts and Telecommunications
Y. Li
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Q Gong
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
The 2016 IEEE Summer Topical Meeting Series, SUM 2016, Newport Beach, USA, July 11th-13th, 2016
120-121
978-1-5090-1900-7 (ISBN)
Subject Categories (SSIF 2011)
Physical Sciences
DOI
10.1109/PHOSST.2016.7548749
ISBN
978-1-5090-1900-7