Hot spot formation in electron-doped PCCO nanobridges
Journal article, 2016
We have investigated the transport properties of optimally doped Pr2-xCexCuO4-δ (PCCO) nanobridges with width down to 100 nm. The critical current density of the nanobridges approaches the Ginzburg-Landau theoretical limit, which demonstrates nanostructures with properties close to the as-grown films. The current voltage characteristics are hysteretic with a sharp voltage switch, of the order of a few millivolts, that we interpret with the occurrence of a hot spot formation. The values of the retrapping current and the voltage switch obtained by modeling the heat transport in the nanobridges are very close to the experimental ones. This feature, together with the extremely short recombination times, make PCCO nanostructures attractive candidates for ultrafast single photon detectors.
Author
Sophie Charpentier
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Riccardo Arpaia
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
J. Gaudet
Universite de Sherbrooke
D. Matte
Universite de Sherbrooke
Reza Baghdadi
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Tomas Löfwander
Chalmers, Microtechnology and Nanoscience (MC2), Applied Quantum Physics
D. Golubev
Karlsruhe Institute of Technology (KIT)
Aalto University
P. Fournier
Universite de Sherbrooke
Thilo Bauch
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Floriana Lombardi
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Physical Review B
24699950 (ISSN) 24699969 (eISSN)
Vol. 94 6 060503Areas of Advance
Nanoscience and Nanotechnology
Subject Categories (SSIF 2011)
Nano Technology
DOI
10.1103/PhysRevB.94.060503