Hardening of the soft phonon in bulk SrTiO3 interfaced with LaAlO3 and SrRuO3
Journal article, 2016

The low-temperature softening of the TO1 phonon of SrTiO3 (STO), which determines its incipient ferroelectricity, is known to be partially hindered either in the bulk under strong electric fields, or in thin STO films. Here we show, by terahertz (THz) reflectivity measurements, that a similar effect is produced in bulk STO and at zero static field by ultrathin metallic films on its surface, like a 10-nm-thick film of SrRuO3 (SRO), or the two-dimensional electron system (2DES) present at the interface with LaAlO3. In SRO/STO, the observed hardening is well explained by the depolarizing action of the SRO free electrons which follow adiabatically the ion motion. In LAO/STO, a weaker TO1 hardening could be detected by patterning the 2DES in the form of microstripes and using a polarized THz field parallel (E-) or orthogonal (E-) to the stripes. At 10 K, when TO1 is excited together with the free electrons by E-, its absorbance is harder by about 7 cm-1 than that measured when TO1 is coupled to the plasmon-polariton confined within the stripes, being excited by E-.

Author

A. Nucara

Universita degli Studi di Roma La Sapienza

M. Ortolani

Universita degli Studi di Roma La Sapienza

L. Baldassarre

Universita degli Studi di Roma La Sapienza

W. S. Mohamed

Universita degli Studi di Roma La Sapienza

U. Schade

Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)

Pier Paolo Aurino

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Alexei Kalaboukhov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Dag Winkler

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

A. Khare

Universita degli Studi di Napoli Federico II

F. Miletto Granozio

Universita degli Studi di Napoli Federico II

P. Calvani

Universita degli Studi di Roma La Sapienza

Physical Review B

24699950 (ISSN) 24699969 (eISSN)

Vol. 93 22 Art. no. 224103- 224103

Subject Categories (SSIF 2011)

Nano Technology

DOI

10.1103/PhysRevB.93.224103

More information

Created

10/8/2017