Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy
Journal article, 2016
We have investigated the growth of GaAsBi single-crystal film on Ge substrate by gas source molecular beam epitaxy. A high-quality GaAsBi epilayer has been obtained. It has been found that the surfactant effect of Bi suppresses the interdiffusion of Ge at the GaAsBi/Ge interface and reduces the misfit dislocation density. The Bi atoms occupy the As sites, as indicated by the appearance of GaBi-like TO(G) and LO(G) phonon modes in Raman spectra. In addition, the redshift of the GaAs-like LO(G) phonon frequency has been observed in the Raman spectra, owing to the Bi-induced biaxial strain and the alloying effect as well.
gaas1-xbix
si
band-gap
alloys
Physics
ge
Author
P. Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
W. W. Pan
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
X. Y. Wu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
C. F. Cao
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Q. Gong
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Applied Physics Express
18820778 (ISSN) 18820786 (eISSN)
Vol. 9 4Subject Categories (SSIF 2011)
Condensed Matter Physics
DOI
10.7567/apex.9.045502