Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence
Journal article, 2015
InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP1-xBix films Photoluminescence (PL) was investigated. N-type doping in the InP1-xBix epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.
Author
P. Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
W. W. Pan
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
K. Wang
Chinese Academy of Sciences
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
X. Wu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
L. Yue
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Q. Gong
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
AIP Advances
2158-3226 (ISSN)
Vol. 5 12 Art. no. 127104- 127104Subject Categories (SSIF 2011)
Materials Engineering
DOI
10.1063/1.4937412