Growth and material properties of InPBi thin films using gas source molecular beam epitaxy

W. W. Pan; P. Wang; X. Y. Wu; K. Wang; J. Cui; L. Yue; L. Y. Zhang; Q. Gong; Shu Min Wang

doi:10.1016/j.jallcom.2015.10.024

Growth and material properties of InPBi thin films using gas source molecular beam epitaxy
Journal article, 2016

The effects of Bi, In flux and PH3 pressure on Bi incorporation, structural and transport properties of InPBi grown by gas source molecular beam epitaxy have been systematically studied. Incorporation of Bi behaves like a dopant and its content increases linearly with Bi flux and inversely with the InP growth rate (In flux), and is independent of the PH3 pressure studied. High PH3 pressure causes rough surface and introduction of Bi improves surface quality. Intrinsic InP grown at a low temperature reveals n-type due to the P-ln antisite defects and the electron density is proportional to the PH3 pressure and inversely proportional to the InP growth rate. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but doesn't degrade the electron mobility for the Bi content up to 2.4%. These results suggest that there is still a large room left to optimize material quality and maximize Bi incorporation in InPBi using gas source molecular beam epitaxy.

Growth rate

Flux ratios

Dilute bismides

Molecular beam epitaxy

InPBi