The Role of Quantum Interference Effects in Normal-State Transport Properties of Electron-Doped Cuprates
Journal article, 2015
The normal-state resistivity of thin films of the infinite-layer electron-doped cuprate Sr (1-x) La (x) CuO (2 +/-delta) has been investigated. Under-doped samples, which clearly show a metal-to-insulator transition (MIT) at low temperatures, have allowed the determination of the fundamental physical mechanism behind the upturn of the resistivity, namely the quantum interference effects (QIEs) in three-dimensional systems. The occurrence of weak localization effects has been unambiguously proven by low-frequency voltage spectral density measurements, which show a linear dependence of the 1/f noise on the applied bias current at low temperatures. The identification of the QIEs at low temperatures has therefore allowed the determination of the high-temperature non-Fermi liquid metallic phase, which is dominated by a linear temperature dependence of the resistivity for all of the samples investigated.
Superconductivity
Metal-insulator-transition
Electron-doped cuprates
Author
P. Orgiani
SPIN CNR Institute - Salerno
Laboratorio Nazionale TASC
A. Galdi
Universita di Salerno
SPIN CNR Institute - Salerno
C. Sacco
SPIN CNR Institute - Salerno
Universita di Salerno
Riccardo Arpaia
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Sophie Charpentier
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Floriana Lombardi
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
C. Barone
Universita di Salerno
SPIN CNR Institute - Salerno
S. Pagano
Universita di Salerno
SPIN CNR Institute - Salerno
D. G. Schlom
Cornell University
L. Maritato
SPIN CNR Institute - Salerno
Universita di Salerno
Journal of Superconductivity and Novel Magnetism
1557-1939 (ISSN) 1557-1947 (eISSN)
Vol. 28 12 3481-3486Areas of Advance
Nanoscience and Nanotechnology
Subject Categories (SSIF 2011)
Nano Technology
DOI
10.1007/s10948-015-3209-0