A 2 GHz oscillator based on a solidly mounted thin film bulk acoustic wave resonator
Paper in proceeding, 2006
This paper describes the design and measurement of a 2 GHz oscillator based on a Solidly Mounted Thin Film Bulk Acoustic wave Resonator (SM TFBAR). The circuitry is patterned on an alumina substrate on which the transistors and capacitors are soldered. The SM TFBAR chip is integrated by means of wirebonding. The measured oscillator centre frequency is about 2.038 GHz with an output power of 0 dBm. © 2006 IEEE.
Author
Martin Norling
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Johannes Enlund
Angstrom Laboratory
Spartak Gevorgian
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology
Ilia Katardjiev
Angstrom Laboratory
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
Vol. 1 1 1813-1816 40153070-7803-7542-5 (ISBN)
Subject Categories (SSIF 2011)
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/MWSYM.2006.249747
ISBN
0-7803-7542-5