Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy
Journal article, 2015
We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III-V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap.
dilute bismides
InGaPBi
molecular beam epitaxy
broad PL spectrum
Author
K. Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
P. Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
W. W. Pan
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
X. Y. Wu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
L. Yue
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Q. Gong
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Semiconductor Science and Technology
0268-1242 (ISSN) 1361-6641 (eISSN)
Vol. 30 9Subject Categories (SSIF 2011)
Atom and Molecular Physics and Optics
DOI
10.1088/0268-1242/30/9/094006