Influence of laser annealing on SiOx films properties

O. O. Gavrylyuk; O. Y. Semchuk; O. V. Steblova; A. A. Evtukh; L. L. Fedorenko; O. L. Bratus; S. O. Zlobin; Magnus Karlsteen

doi:10.1016/j.apsusc.2014.11.066

Influence of laser annealing on SiOx films properties
Journal article, 2015

The interaction of laser irradiation with SiOx films, and the process of decomposition of SiOx on SiO2 and Si nanocrystals under the influence of laser irradiation are investigated. The mathematical modeling of temperature distribution in a c-Si wafer as well as on its surface is carried out. It is shown that laser pulses can efficiently heat up the samples of crystalline silicon. Using multi-pulse procedure, the temperature necessary for annealing can be achieved with lower intensity of laser irradiation. Experimental investigations of laser-annealed SiOx films allowed determining their transformation with the formation of nanoislands. It was concluded that the surface topology, dielectric matrix structure, and electrical conductivity depend on laser beam intensity during the annealing process.

PHOTOLUMINESCENCE

Applied

V636-637

FRANCE

Chemistry

Condensed Matter

V69

OPTICAL-PROPERTIES

CRYSTALLIZATION

Physics

RTUGAL

Laser annealing

Physical

Thermal conductivity equation

Coatings & Films

SILICON NANOCRYSTALS

MEMORY

RASBOURG

P444

P484

THIN-FILMS

DEPOSITION

Materials Science

Nanocrystal

LIGHT

Physics

Silicon oxide

Author

O. O. Gavrylyuk

Institute of Surface Chemistry National Academy of Sciences in Ukraine