Thermal conductivity of isotopically enriched silicon carbide
Paper in proceeding, 2013
Since the semiconductor silicon carbide presents attractive opportunities for the fabrication of novel electronic devices, there is significant interest in improving its material quality. Shrinking component sizes and high demands for efficiency and reliability make the capability to release excess heat an important factor for further development. Experience from Si and Diamond tells us that isotopic enrichment is a possible way to increase the thermal conductivity. We have produced samples of 4H-SiC that contain 28Si and 12C to a purity of 99.5%. The thermal conductivity in the c-direction of these samples has been measured by a transient thermoreflectance method. An improvement due to enrichment of at least 18% was found. The result is valid for a temperature of 45K above room temperature. A preliminary study of the temperature dependence of the thermal conductivity demonstrates a strong temperature dependence in agreement with earlier reports for 4H. © 2013 IEEE.
Silicon
Temperature distribution
Silicon carbide
Author
B. Lundqvist
Linkopings universitet
P.E. Raad
Southern Methodist University
TMX Scientific
M. Yazdanfar
Linkopings universitet
P. Stenberg
Linkopings universitet
R. Liljedahl
Linkopings universitet
P.L. Komarov
TMX Scientific
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
J.W. Ager
Lawrence Berkeley National Laboratory
O. Kordina
Linkopings universitet
I.G. IVanov
Linkopings universitet
Erik Janzén
Linkopings universitet
THERMINIC 2013 - 19th International Workshop on Thermal Investigations of ICs and Systems, Proceedings
58-61
Subject Categories (SSIF 2011)
Physical Sciences
DOI
10.1109/THERMINIC.2013.6675243