Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene
Journal article, 2014
We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split-bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz^0.5. Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies. This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.
Graphene field effect transistors
direct terahertz detection
CVD graphene
antenna-integrated detectors
Author
Audrey Zak
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
MICHAEL ANDERSSON
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Maris Bauer
Johann Wolfgang Goethe Universitat Frankfurt am Main
Jonas Matukas
Vilniaus universitetas
Alvydas Lisauskas
Vilniaus universitetas
Johann Wolfgang Goethe Universitat Frankfurt am Main
Hartmut Roskos
Johann Wolfgang Goethe Universitat Frankfurt am Main
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Nano Letters
1530-6984 (ISSN) 1530-6992 (eISSN)
Vol. 14 10 5834-5838Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories (SSIF 2011)
Nano Technology
Other Electrical Engineering, Electronic Engineering, Information Engineering
Infrastructure
Nanofabrication Laboratory
DOI
10.1021/nl5027309