Multiplicative and Additive Low-Frequency Noise in Microwave Transistors
Journal article, 2014
The additive noise (i.e., noise figure) in the 1-Hz-1-GHz range and multiplicative noise (i.e., gain fluctuations) in the 1-Hz-100-kHz range have been measured for six different types of high electron mobility transistors and two heterojunction bipolar transistors. The instrumentation enables measurement of multiplicative noise as small as 10(-6) (1 ppm). Measurements were performed at 300 and 22 K and results are discussed with regard to transistor technology, coupling of additive and multiplicative effects, and bias circuit dependence. The results are applied to radiometers and the degradation in performance due to the gain fluctuation is presented.
STABILITY
Gain fluctuations
HEMTS
radiometers
transistors
AMPLIFIERS
WIDE-BAND
1/f
high electron-mobility transistor (HEMT)
GAIN FLUCTUATIONS
noise
Author
S. Weinreb
California Institute of Technology
Joel Schleeh
GigaHertz Centre
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN)
Vol. 62 1 83-91Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/tmtt.2013.2293123