Novel Dilute Bismides for IR Optoelectronics Applications
Paper in proceeding, 2013

III-V-Bi compounds reveal a number of attractive physical properties promising for novel IR optoelectronic applications [1,2] and have received considerable attention as witnessed by the dedicated international workshops on this topic in the consecutive past four years. The isoelectronic nature of Bi atoms in III-Vs induces strong interactions with the energy bands of host materials leading to large band-gap reduction, less temperature sensitive band-gap and large spin-orbit split band. So far the most studied material is Ga(N)AsBi, while other dilute bismides have also been reported recently. In this paper, we shall briefly review several novel bismides: GaSbBi, InSbiBi, InAsBi, InPBi and InGaAsBi, and the Bi surfactant effect from our group, all grown by molecular beam epitaxy (MBE).

Author

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Kai Wang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Yi Gu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Other publications Research

X Chen

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Hong Ye

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Haifei Zhou

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chuanzheng Kang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Yaoyao Li

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Cunfang Cao

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Liyao Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Jun Shao

Chalmers University of Technology

Qian Gong

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Yonggang Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Asia Communications and Photonics Conference, ACP

2162108X (ISSN)


978-155752989-3 (ISBN)

Subject Categories (SSIF 2011)

Materials Engineering

ISBN

978-155752989-3

More information

Created

10/8/2017

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