Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes
Paper in proceeding, 2013
DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zero-bias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.
diode
self-switching
detector
SSD
THz
InAs
Author
Andreas Westlund
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
L. Desplanque
University of Lille
X. Wallart
University of Lille
2013 International Conference on Indium Phosphide and Related Materials
1092-8669 (ISSN)
978-1-4673-6131-6 (ISBN)
Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ICIPRM.2013.6562599
ISBN
978-1-4673-6131-6