Room temperature THz detection and emission with semiconductor nanodevices
Paper in proceeding, 2013
In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise of detectors at THz frequencies.
Monte Carlo simulation
THz devices
nanodevices
Gunn oscillations
Author
J. Mateos
Universidad de Salamanca
Jean François Millithaler
Universidad de Salamanca
Ignacio Íñiguez-De-La-Torre
Universidad de Salamanca
Ana Íñiguez-De-La Torre
Universidad de Salamanca
Beatriz G. Vasallo
Universidad de Salamanca
Susana Muñoz Pérez
Universidad de Salamanca
T. Gonzalez
Universidad de Salamanca
Paul Sangaré
IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
Guillaume Ducournau
IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
Christophe Gaquière
IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
Y.Alimi
University of Manchester
L.Q.Zhang
University of Manchester
Ali A. Rezazadeh
University of Manchester
A.M. Song
University of Manchester
Andreas Westlund
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
215-218
9781467346689 (ISBN)
Subject Categories (SSIF 2011)
Nano Technology
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/CDE.2013.6481381
ISBN
9781467346689