True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
Journal article, 2013
In this paper, we report the room-temperature and cryogenic properties of true planar 110 nm InAs/AlSb HEMTs fabricated with Ar-ion isolation technology. Device isolation is generally improved and is in particular increased by four orders of magnitude at 6 K compared to 300 K. This results in improved drain current saturation, lower gate leakage current and 23% higher peak transconductance. The RF performance is significantly improved as well, with 47% higher f(T) (162 GHz) and 72% higher f(max) (155 GHz) at the low drain voltage of 0.1 V, compared to room temperature. The overall performance of the fabricated devices shows the suitability of ion implantation for the device isolation at cryogenic temperature. Furthermore, the excellent stability against oxidation and truly planar structure of these devices demonstrate great potential for highly integrated cryogenic millimeter-wave circuits in InAs/AlSb technology with ultra-low power consumption.
field-effect transistors
impact ionization
ohmic contacts
device
InAs/AlSb high electron mobility transistor (HEMT)
Low-power
isolation
low-voltage
MMICs
Cryogenic
conductance
heterostructures
gaas
alsb/inas hemts
Ion implantation
inas
Author
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Morteza Abbasi
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
A. Hallen
The Royal Institute of Technology (KTH)
L. Desplanque
University of Lille
X. Wallart
University of Lille
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Solid-State Electronics
0038-1101 (ISSN)
Vol. 79 268-273Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.sse.2012.06.013