Electrical and structural properties of ABO3/SrTiO3 interfaces
Paper in proceeding, 2012
Electrical transport and microstructure of interfaces between nm-thick films of various perovskite oxides grown by pulsed laser deposition (PLD) on TiO2 terminated SrTiO3 (STO) substrates are compared. LaAlO3/STO and KTaO3/STO interfaces become quasi-2DEG after a critical film thickness of 4 unit cell layers. The conductivity survives long anneals in oxygen atmosphere. LaMnO3/STO interfaces remain insulating for all film thicknesses and NdGaO3/STO interfaces are conducting but the conductivity is eliminated after oxygen annealing. Medium-energy ion spectroscopy and scanning transmission electron microscopy detect cationic intermixing within several atomic layers from the interface in all studied interfaces. Our results indicate that the electrical reconstruction in the polar oxide interfaces is a complex combination of different mechanisms, and oxygen vacancies play an important role.
Author
Alexei Kalaboukhov
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Tord Claeson
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Pier Paolo Aurino
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Robert Gunnarsson
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Dag Winkler
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Eva Olsson
Chalmers, Applied Physics, Microscopy and Microanalysis
Chalmers, Applied Physics, Eva Olsson Group
Nikolina Tuzla
Chalmers, Applied Physics, Eva Olsson Group
Johan Börjesson
Chalmers, Applied Physics, Microscopy and Microanalysis
Chalmers, Applied Physics, Eva Olsson Group
Yu A. Boikov
Ioffe Institute
I.T. Serenkov
Ioffe Institute
V.I. Sakharov
Ioffe Institute
M. P. Volkov
Ioffe Institute
Materials Research Society Symposium Proceedings
0272-9172 (ISSN)
Vol. 1454 167-172978-160511431-6 (ISBN)
Subject Categories (SSIF 2011)
Physical Sciences
DOI
10.1557/opl.2012.925
ISBN
978-160511431-6