Breakdown of the quantum Hall effect in graphene
Paper in proceeding, 2012
We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.
quantum Hall effect
Graphene
resistance standard
precision measurement
Author
Tjbm Janssen
National Physical Laboratory
A.Y. Tzalenchuk
National Physical Laboratory
A. M. R. Baker
University of Oxford
J. A. Alexander-Webber
University of Oxford
R. J. Nicholas
University of Oxford
R. Yakimova
Linkopings universitet
Samuel Lara Avila
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
S. Kopylov
Lancaster University
V. I. Fal'ko
Lancaster University
2012 Conference on Precision Electromagnetic Measurements, CPEM 2012, Washington, DC, 1-6 July 2012
0589-1485 (ISSN)
510-511978-146730439-9 (ISBN)
Subject Categories (SSIF 2011)
Physical Sciences
DOI
10.1109/CPEM.2012.6251027
ISBN
978-146730439-9