Spatial variarion of hole eigen energies in Ge/Si quantum wells
Paper in proceeding, 2011
Ge quantum well (QW) structures were prepared through Si-capping of 3.3 ML of Ge by MBE on p +-(001) Si substrates at a growth temperature of 550°C. The spatial variation of hole eigen energies in the QW were revealed by DLTS. Depending on the position on the wafer surface, the hole emission may be imposed by a lateral quantum confinement effect. Results of a study by HRTEM methods demonstrate pronounced fluctuations of the QW thickness and variations of the strain field in the QW.
DLTS
HRTEM
Ge/Si
QWs
MBE
Author
M. Kaniewska
Instytut Technologii Elektronowej
Olof Engström
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
A. Karmous
Universitat Stuttgart
O. Kirfel
Universitat Stuttgart
E Kasper
Universitat Stuttgart
Bahman Raeissi
Chalmers, Microtechnology and Nanoscience (MC2)
Johan Piscator
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
G Zaremba
Instytut Technologii Elektronowej
M Kaczmarczyk
Instytut Technologii Elektronowej
M Wzorek
Instytut Technologii Elektronowej
A Czerwinsky
Instytut Technologii Elektronowej
B Surma
Instytutu Technologii Materialow Elektronicznych w Warszawie
A Wnuk
Instytutu Technologii Materialow Elektronicznych w Warszawie
AIP Conference Proceedings
0094-243X (ISSN) 1551-7616 (eISSN)
Vol. 1399 293-294978-073541002-2 (ISBN)
Areas of Advance
Nanoscience and Nanotechnology
Subject Categories (SSIF 2011)
Other Engineering and Technologies not elsewhere specified
DOI
10.1063/1.3666369
ISBN
978-073541002-2