Tuning light absorption by band gap engineering in ZnCdO as a function of MOVPE-synthesis conditions and annealing
Journal article, 2011
Options of flow rate and growth temperature variations were investigated in order to reveal limitations for single phase wurtzite ZnCdO synthesis by atmospheric pressure metal organic vapor phase epitaxy (MOVPE). It is found that in spite of efficient Cd incorporation (up to 60%), the wurtzite phase and the corresponding single step absorption threshold dominate only up to a Cd content <= 17% in the as-grown samples. Post-fabrication anneals reveal two characteristic optical absorption edges at similar to 2.3 and similar to 3.15 eV that were associated with direct band gaps of cubic CdO and thermodynamically stable wurtzite ZnCdO, respectively.
vapor phase epitaxy
vectored-flow epitaxy
layers
nanorods
growth
Phase separation
chemical-vapor-deposition
Light absorption
ZnCdO
zn1-xcdxo thin-films
Metal organic
Band gap engineering
Author
V. Venkatachalapathy
Universitetet i Oslo
A. Galeckas
Universitetet i Oslo
Raja Sellappan
Chalmers, Applied Physics, Chemical Physics
Dinko Chakarov
Chalmers, Applied Physics, Chemical Physics
A. Y. Kuznetsov
Universitetet i Oslo
Journal of Crystal Growth
0022-0248 (ISSN)
Vol. 315 1 301-304Subject Categories (SSIF 2011)
Physical Sciences
DOI
10.1016/j.jcrysgro.2010.09.056