Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs
Journal article, 2011
gallium nitride (GaN)
Linear approximation
high electron-mobility transistors (HEMTs)
nonlinear distortion
linear characteristics
Author
Mattias Thorsell
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Kristoffer Andersson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Guillaume Pailloncy
Yves Rolain
Vrije Universiteit Brussel
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN)
Vol. 59 12 1-8Areas of Advance
Information and Communication Technology
Subject Categories (SSIF 2011)
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/TMTT.2011.2169423