Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents
Journal article, 2011
Thermally stimulated currents (TSCs) have been measured to investigate electron traps in HfO2 prepared by reactive sputtering on silicon. Broken planes of the silicon crystal, which may contribute to the occurrence of interface states, were identified between the silicon and SiOx interlayer by transmission electron microscopy (TEM). A second domain was found between SiOx and HfO2 constituting a gradual transition region between the two oxides. This interface region was found to be a source of unstable charge traps where captured electrons interact with the silicon energy states through a combined tunneling and thermal process.
dielectric interfaces
metal
defects
generation statistics
border traps
ultrathin hafnium oxide
internal interfaces
hfo2
gate stacks
oxide-semiconductor capacitors
Author
Bahman Raeissi
Chalmers, Microtechnology and Nanoscience (MC2)
Johan Piscator
Chalmers, Microtechnology and Nanoscience (MC2)
Y. Y. Chen
Chalmers University of Technology
Olof Engström
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Journal of the Electrochemical Society
0013-4651 (ISSN)
Vol. 158 3 G63-G70Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1149/1.3530845