Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As
Journal article, 2011
Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.
Author
Johan Adell
Chalmers, Applied Physics, Solid State Physics
Intikhab Ulfat
Chalmers, Applied Physics, Solid State Physics
Lars Ilver
Chalmers, Applied Physics, Solid State Physics
J. Sadowski
Lunds Universitet
Institute of Physics of the Polish Academy of Sciences
Krister Karlsson
Hogskolan Skovde
Janusz Kanski
Chalmers, Applied Physics, Solid State Physics
Journal of Physics Condensed Matter
0953-8984 (ISSN)
Vol. 23 8 085003Subject Categories (SSIF 2011)
Materials Engineering
DOI
10.1088/0953-8984/23/8/085003