Dielectric Properties of SiC nanowires With Different Chemical Compositions
Journal article, 2011
The investigated SiC nanowires were prepared by the “Shape Memory Process” technique. Depending on the processing parameters, nanowires with different chemical compositions, i.e. with varying amount of Si, C and O were obtained. The permittivity of the SiC nanowires was measured in the frequency range between 1 and 18 GHz which revealed that the permittivity, both real and imaginary parts, depends mostly on the C-content of the nanowires. A higher C concentration in the nanowires gives rise to a higher permittivity.
Nanowires
permittivity
Silicon carbide
silicon carbide nanowires
dielectric measurements
Silicon
Dielectrics
Permittivity
Carbon content
Carbon
Author
Anna Jänis
Totalforsvarets forskningsinstitut
Yiming Yao
Chalmers, Materials and Manufacturing Technology, Materials Technology
Uta Klement
Chalmers, Materials and Manufacturing Technology, Surface and Microstructure Engineering
IEEE Transactions on Nanotechnology
1536-125X (ISSN)
Vol. 10 4 751-756 5575442Subject Categories (SSIF 2011)
Materials Engineering
Areas of Advance
Materials Science
DOI
10.1109/TNANO.2010.2076373