Large-Area Single-Mode GaSb-based VCSELs using an Inverted Surface Relief
Paper in proceeding, 2010
Large-area GaSb-based BTJ VCSELs at ∼2.35 μm were fabricated using an inverted surface relief technique to support the single transverse mode operation. The devices operate in continuous-wave and are (electro-)thermally tunable over 6 nm.
VCSEL
Surface relief
Single-mode
Author
S. Arafin
Walter Schottky Institute
A. Bachmann
Walter Schottky Institute
K. Vizbaras
Walter Schottky Institute
Johan Gustavsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
M. C. Amann
Walter Schottky Institute
23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
61-62
978-142445368-9 (ISBN)
Subject Categories (SSIF 2011)
Telecommunications
DOI
10.1109/PHOTONICS.2010.5698757
ISBN
978-142445368-9