Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature

Journal article, 2010

We report on the hot-wall MOCVD growth of Mg-doped Alx Ga1–xN layers with an Al content as high as x ∼ 0.85. After subjecting the layers to post-growth in-situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 kΩ cm was obtained indicating an enhanced p-type conductivity compared to published data for Alx Ga1–xN layers with a lower Al content of x ∼ 0.70 and a room temperature resistivity of about 10 kΩ cm. It is believed that the enhanced p-type conductivity is a result of reduced compensation by native defects through growth conditions enabled by the distinct hot-wall MOCVD system.