Sb-HEMT: Toward 100-mV Cryogenic Electronics
Journal article, 2010
In this paper, we present a first full set of characteristics (dc, f(T), f(max), and noise) of InAs/AlSb high-electron mobility transistors (HEMTs) operating under cryogenic temperature and low-power conditions. Those results are systematically compared and deeply analyzed at room temperature and 77 K. The characteristics improvement achieved at 77 K open up the possibility to develop ultralow-power cryogenic electronics (low-noise amplifier), featuring excellent high-frequency/noise performances below 100-mV dc biasing.
high-electron mobility transistors (HEMTs)
amplifier
temperature
impact ionization
mosfet
noise
InAs/AlSb
field-effect transistors
Antimonide-based compound semiconductor
inas/alsb hemt
high-frequency
low-power electronics
cryogenic electronics
III-V semiconductors
alsb/inas hemts
Author
A. Noudeviwa
Universite des Sciences et Technologies de Lille
Y. Roelens
Universite des Sciences et Technologies de Lille
F. Danneville
Universite des Sciences et Technologies de Lille
A. Olivier
Universite des Sciences et Technologies de Lille
N. Wichmann
Universite des Sciences et Technologies de Lille
N. Waldhoff
Universite des Sciences et Technologies de Lille
S. Lepilliet
Universite des Sciences et Technologies de Lille
G. Dambrine
Universite des Sciences et Technologies de Lille
L. Desplanque
Universite des Sciences et Technologies de Lille
X. Wallart
Universite des Sciences et Technologies de Lille
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
S. Bollaert
Universite des Sciences et Technologies de Lille
IEEE Transactions on Electron Devices
0018-9383 (ISSN)
Vol. 57 8 1903-1909Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/TED.2010.2050109