Methods for characterization of wafer-level encapsulation applied on silicon to LTCC anodic bonding
Journal article, 2010
This paper presents initial results on generic characterization methods for wafer-level encapsulation. The methods, developed specifically to evaluate anodic bonding of low-temperature cofired ceramics (LTCC) to Si, are generally applicable to wafer-level encapsulation. Different microelectromechanical system (MEMS) structures positioned over the whole wafer provide local information about the bond quality. The structures include (i) resonating cantilevers as pressure sensors for bond hermeticity, (ii) resonating bridges as stress sensors for measuring the stress induced by the bonding and (iii) frames/mesas for pull tests. These MEMS structures have been designed, fabricated and characterized indicating that local information can easily be obtained. Buried electrodes to enable localized bonding have been implemented and their effectiveness is indicated from first results of the novel Si to LTCC anodic bonding.
Author
M. F. Khan
Imego AB - The Institute of Micro and Nanotechnology
Chalmers University of Technology
Farzan Alavian Ghavanini
Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory
S. Haasl
Imego AB - The Institute of Micro and Nanotechnology
L. Lofgren
Imego AB - The Institute of Micro and Nanotechnology
K. Persson
Imego AB - The Institute of Micro and Nanotechnology
Cristina Rusu
Imego AB - The Institute of Micro and Nanotechnology
K. Schjolberg-Henriksen
SINTEF Digital
Peter Enoksson
Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory
Journal of Micromechanics and Microengineering
0960-1317 (ISSN)
Vol. 20 6Areas of Advance
Transport
Production
Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1088/0960-1317/20/6/064020