Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Journal article, 2009
Excellent reliability performance of AlGaN/GaN HEMTs on SiC substrates for next generation mobile communication systems has been demonstrated using DC and RF stress tests on 8 x 60 mu m wide and 0.5 mu m long AlGaN/GaN HEMTs at a drain voltage of V-d = 50 V. Drain current recovery measurements after stress indicate that the degradation is partly caused by slow traps generated in the SiN passivation or in the HEMT epitaxial layers. The traps in the SiN passivation layer were characterized using high and low frequency capacitance-voltage (CV) measurements of MIS test structures on thick lightly doped GaN layers. (C) 2009 Elsevier Ltd. All rights reserved.
transistors
Author
M. Dammann
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
W. Pletschen
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
P. Waltereit
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
W. Bronner
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
R. Quay
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
S. Muller
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
M. Mikulla
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
O. Ambacher
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
P. J. van der Wel
NXP Semiconductors
S. Murad
NXP Semiconductors
T. Rodle
NXP Semiconductors
R. Behtash
United Monolithic Semiconductors
F. Bourgeois
United Monolithic Semiconductors
K. Riepe
United Monolithic Semiconductors
Martin Fagerlind
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Einar Sveinbjörnsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Microelectronics and Reliability
0026-2714 (ISSN)
Vol. 49 5 474-477Subject Categories (SSIF 2011)
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.microrel.2009.02.005